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発表年月
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タイトル／共同研究者
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掲載誌
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巻・号・頁
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学術機関等
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| 2018/11 |
Formation of coated phosphor layers by rotation-revolution for remote-phosphor LED bulbs and characterization of LED light
bulb with super-high color rendition
Hiroyasu Ishikawa
|
IEEE Transactions on Components, Packaging and Manufacturing Technology |
8巻
11号
2021から
2029ページまで
|
|
| 2018/07 |
Large-area profile transformation of inkjet-printed Pd precursor films by slit-nozzle humidification and redrying for PdO
nanofilm field emitters
Hiroyasu Kondo,Tsuyoshi Sato,Hiroyasu Ishikawa
|
Journal of Imaging Science and Technology |
62巻
4号
|
|
| 2017/07 |
Novel inkjet printing system and formation mechanism of PdO nanofilms for field-emission imaging devices
○Hiroyasu Kondo1,Tsuyoshi Sato,Junsei Yamabe,Hiroyasu Ishikawa
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J. Phys. D: Appl. Phys. |
50巻
|
|
| 2016/04 |
走査型プローブ顕微鏡によるサファイア基板上窒化ガリウム層の表面形状及び表面電位観測
○潤間威史,佐藤宣夫,石川博康
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電気学会論文誌E(センサ・マイクロマシン部門誌） |
136巻
4号
96から
101ページまで
|
一般社団法人 電気学会 |
| 2011/01 |
Reduction of threading dislocations in GaN on in-situ meltback-etched Si substrates
H. Ishikawa, K. Shimanaka
|
J. Crystal Growth |
315巻
196から
199ページまで
|
|
| 2010/03 |
Improved MOCVD growth of GaN on Si-on-porous-silicon substrates
H. Ishikawa,K. Shimanaka,M. Azfar bin M. Amir,Y. Hara, M. Nakanishi
|
Phys. Stat. Sol. (c) |
7巻
2049から
2051ページまで
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|
| 2008/11 |
MOCVD growth of GaN on porous silicon substrates
H. Ishikawa, K. Shimanaka, F. Tokura, Y. Hayashi, Y. Hara, M. Nakanishi
|
J. Crystal Growth |
310巻
4900から
4903ページまで
|
|
| 2008/03 |
GaInN light emitting diodes with AlInN/GaN distributed Bragg reflector on Si
H. Ishikawa,T. Egawa,T. Jimbo
|
Phys. Stat. Sol. (c) |
Vol. 5巻
No. 6号
2086から
2088ページまで
|
|
| 2006/09 |
Study on mobility enhancement in MOVPE-grown AlGaN/AlN/GaN HEMT structures using a thin AlN interfacial layer
Makoto Miyoshi, Takashi Egawa, Hiroyasu Ishikawa
|
SOLID-STATE ELECTRONICS |
50巻
9-10号
1515から
1521ページまで
|
|
| 2005/10 |
Recessed-Gate AlGaN/GaN HFETs With Lattice-Matched InAlGaN Quaternary Alloy Capping Layers
S. Nakazawa,T. Ueda,K. Inoue,T. Tanaka,H. Ishikawa,T. Egawa
|
IEEE. Trans. Electron. Dev. |
Vol. 52巻
No. 10号
2124から
2128ページまで
|
|
| 2005/09 |
Nanostructural characterization and two-dimensional electron-gas properties in high-mobility AlGaN/AlN/GaN heterostructures
grown on epitaxial AlN/sapphire templates
M Miyoshi, T Egawa, H Ishikawa, KI Asai, T Shibata, M Tanaka, O Oda
|
JOURNAL OF APPLIED PHYSICS |
98巻
6号
|
|
| 2005/09 |
DC Characteristics in High-Quality AlGaN/AlN/ High-Electron-Mobility Transistors Grown on AlN/Sapphire Templates
M. Miyoshi ,A. Imanishi,T. Egawa,H. Ishikawa,K. Asai,T. Shibata,O. Oda
|
Jpn. J. Appl. Phys. |
Vol. 44巻
No. 9A号
6490から
6493ページまで
|
|
| 2005/08 |
Structural characterization of strained AlGaN layers in different Al content AlGaN/GaN heterostructures and its effect on
two-dimensional electron transport properties
M. Miyoshi,T. Egawa,H. Ishikawa
|
J. Vac. Sci. Technol. B, |
Vol. 23巻
No. 4号
1527から
1531ページまで
|
|
| 2005/03 |
High Performance of InGaN LEDs on (111) Silicon Substrates Grown by MOCVD
T. Egawa,B. Zhang,H. Ishikawa
|
IEEE. Electron. Dev. Lett. |
26巻
3号
169から
171ページまで
|
|
| 2004/12 |
MOVPE growth and characterization of high-Al-content AlGaN/GaN heterostructures on 100-mm-diameter sapphire substrates
M. Miyoshi ,M. Sakai,H. Ishikawa,T. Egawa,T. Jimbo,M. Tanaka,O. Oda
|
J. Crystal Growth |
272巻
239から
299ページまで
|
|
| 2004/12 |
Characterization of Different-Al-Content AlGaN/GaN Heterostructures and High-Electron-Mobility Transistors Grown on 100-mm-Diameter
Sapphire Substrates by Metalorganic Vapor Phase Epitaxy
M. Miyoshi ,M. Sakai,S. Arulkumaran,H. Ishikawa,T. Egawa,M. Tanaka,O. Oda
|
Jpn. J. Appl. Phys. |
43巻
12号
7939から
7943ページまで
|
|
| 2004/12 |
Characterization of GaInN light-emitting diodes with distributed Bragg reflector grown on Si
H. Ishikawa,B. Zhang:K. Asano,T. Egawa,T. Jimbo
|
J. Crystal Growth |
322から
326ページまで
|
|
| 2004/09 |
Improved characteristics of GaN-based light-emitting diodes by distributed Bragg reflector grown on Si
H. Ishikawa,K. Asano,B. Zhang,T. Egawa,T. Jimbo
|
Phys. Stat. Sol. (a) |
201巻
12号
2653から
2657ページまで
|
|
| 2004/09 |
High-electron-mobility AlGaN/AlN/GaN heterostructures grown on 100-mm-diam epitaxial AlN/sapphire templates by metalorganic
vapor phase epitaxy
M. Miyoshi,H. Ishikawa,T. Egawa,K. Asai,M. Mouri,T. Shibata
|
Appl. Phys. Lett. |
85巻
10号
1710から
1712ページまで
|
|
| 2004/09 |
Effects of RTA cover material on the properties of GaNAs/GaAs triple quantum wells grown by chemical beam epitaxy
YJ Sun, M Yamamori, T Egawa, H Ishikawa, K Mito
|
JOURNAL OF CRYSTAL GROWTH |
269巻
2-4号
229から
234ページまで
|
|
| 2004/09 |
A quantitative model for the blueshift induced by rapid thermal annealing in GaNAs/GaAs triple quantum wells
YJ Sun, T Egawa, H Ishikawa
|
JOURNAL OF APPLIED PHYSICS |
96巻
5号
2586から
2591ページまで
|
|
| 2004/05 |
Influence of Growth Temperature on Quaternary AlInGaN Epilayers for Ultraviolet Emission Grown by Metalorganic Chemical Vapor
Deposition
Y. Liu,T. Egawa,H. Ishikawa,B. Zhang,M. Hao
|
Jpn. J. Appl. Phys. |
43巻
5A号
2414から
2418ページまで
|
|
| 2004/05 |
Three growth-temperature-dependent regions for nitrogen incorporation in GaNAs grown by chemical beam epitaxy
YJ Sun, M Yamamori, T Egawa, H Ishikawa
|
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS |
43巻
5A号
2409から
2413ページまで
|
|
| 2004/05 |
Formation chemistry of high-density nanocraters on the surface of sapphire substrates with an in situ etching and growth mechanism
of device-quality GaN films on the etched substrates
M. Hao,H. Ishikawa,T. Egawa
|
Appl. Phys. Lett. |
84巻
20号
4041から
4043ページまで
|
|
| 2004/03 |
High-temperature-grown quaternary AlInGaN epilayers and multiple quantum wells for ultraviolet emission
Y. Liu,T. Egawa,H. Ishikawa,H. Jiang,B. Zhang,M. Hao,T. Jimbo
|
J. Cryst. Growth |
264巻
159から
164ページまで
|
|
| 2004/03 |
Comparative Study on the Properties of GaNAs/GaAs Triple Quantum Wells Annealed by Different Methods
Y. Sun,M. Yamamori,T. Egawa,H. Ishikawa
|
Jpn. J. Appl. Phys |
43巻
3A号
|
|
| 2004/01 |
Metal-semiconductor-metal UV photodetectors fabricated on undoped AlGaN/GaN HEMMT structure
H Jiang, T Egawa, H Ishikawa, C Shao, T Jimbo
|
PROCEEDINGS OF THE 2004 CHINA-JAPAN JOINT MEETING ON MICROWAVES |
90から
92ページまで
|
|
| 2004/01 |
High performance AlGaN/AlN/GaN HEMTs grown on 100-mm-diameter epitaxial AlN/sapphire templates by MOVPE
M Miyoshi, A Imanishi, H Ishikawa, T Egawa, K Asai, M Mouri, T Shibata, M Tanaka, O Oda
|
2004 IEEE CSIC SYMPOSIUM, TECHNICAL DIGEST 2004 |
193から
196ページまで
|
|
| 2004/01 |
Growth and characterization of AlGaN/AlN/GaN HEMTs on 100-mm-diameter epitaxial AlN/sapphire templates
M Miyoshi, A Irnanishi, H Ishikawa, T Egawa, K Asai, M Mouri, T Shibata, M Tanaka, O Oda
|
IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST |
1031から
1034ページまで
|
|
| 2003/12 |
Growth of 100-mm-diameter AlGaN/GaN heterostructures on sapphire substrates by MOVPE
M. Miyoshi,H. Ishikawa,T. Egawa,T. Jimbo
|
Phys. Stat. Sol. (c) |
0巻
7号
2091から
2094ページまで
|
|
| 2003/12 |
Reduction of the bowing in MOVPE AlGaN/GaN HEMT structures by using an interlayer insertion method
M. Sakai,T. Egawa,H. Ishikawa,T. Jimbo
|
Phys. Stat. Sol. (c) |
0巻
7号
2412から
2415ページまで
|
|
| 2003/12 |
InGaN multiple-quantum-well light-emitting diodes on an AlN/sapphire template by metalorganic chemical vapor deposition
B. Zhang,T. Egawa,Y. Liu,H. Ishikawa,T. Jimbo
|
Phys. Stat. Sol. (c) |
0巻
7号
2244から
2247ページまで
|
|
| 2003/12 |
Growth of GaN on 4-inch Si substrate with a thin AlGaN/AlN intermediate layer
H. Ishikawa,M. Kato,M. S. Hao,T. Egawa,T. Jimbo
|
Phys. Stat. Sol. (c) |
0巻
7号
2177から
2180ページまで
|
|
| 2003/12 |
Growth and characterization of high-quality quaternry AlInGaN epilayers on sapphire
Y. Liu,T. Egawa,H. Ishikawa,T. Jimbo
|
J. Crystal Growth |
259巻
245から
251ページまで
|
|
| 2003/11 |
High-quality quaternary AlInGaN epilayers on sapphire
Y. Liu,T. Egawa,H. Ishikawa,T. Jimbo
|
Phys. Stat. Sol. (a) |
200巻
1号
36から
39ページまで
|
|
| 2003/10 |
Growth of 100-mm-Diameter AlGaN/GaN Heterostructures on Sapphire Substrates by MOVPE
M. Miyoshi ,M. Sakai,H. Ishikawa,T. Egawa,T. Jimbo,M. Tanaka,O.Oda
|
IEICE TRANSACTIONS on Electronic |
E86-C巻
10号
2077から
2081ページまで
|
|
| 2003/10 |
High-Quality AlGaN/GaN HEMTs on Epitaxial AlN/Sapphire Templates
M. Sakai, K. Asano,S. Arulkumaran,H. Ishikawa,T. Egawa,T. Jimbo
|
IEICE Trans. Electron. |
E86-C巻
10号
2071から
2075ページまで
|
|
| 2003/10 |
Valence Band Discontinuity at the AlN/Si Interface
H. Ishikawa,B. Zhang,T. Egawa,T.Jimbo
|
Jpn. J. Appl. Phys. |
42巻
10号
6413から
6414ページまで
|
|
| 2003/08 |
Highly resistive GaN layers formed by ion implantation of Zn along the c axis
T. Oishi,N. Miura,M. Suita,T. Nanjo,Y. Abe,T. Ozeki,H. Ishikawa,T. Egawa,T. Jimbo
|
J. Appl. Phys |
94巻
3号
1662から
1666ページまで
|
|
| 2003/08 |
Electrical Characteristics of AlGaN/GaN HEMTs on 4-in Diameter Sapphire Substrate
S. Arulkumaran,M. Miyoshi,T. Egawa,H. Ishikawa,T. Jimbo
|
IEEE. Electron Dev. Lett., |
24巻
8号
497から
499ページまで
|
|
| 2003/06 |
Anomalous compositional pulling effect in InGaN/GaN multiple quantum wells
M. Hao,H. Ishikawa,T. Egawa,C. L. Shao,T. Jimbo
|
Appl. Phys. Lett. |
82巻
26号
4702から
4704ページまで
|
|
| 2003/05 |
Correlation between Electrical and Surface Properties of n-GaN on Sapphire Grown by Metal-Organic Chemical Vapor Deposition
N. Nakada,M .Mori,H. Ishikawa,T. Egawa,T. Jimbo
|
Jpn. J. Appl. Phys. |
42巻
5A号
2573から
2577ページまで
|
|
| 2003/05 |
Temperature dependence of gate-leakage current in AlGaN/GaN high-electron-mobility transistors
ARULKUMARAN S.
|
Appl. Phys. Lett. |
82巻
18号
3110から
3112ページまで
|
|
| 2003/04 |
Characterization of different-Al-content AlxGa1-xN/GaN heterostructures and high-electron-mobility transistors on sapphire
S. Arulkumaran,T. Egawa,H. Ishikawa,T. Jimbo
|
J. Vac. Sci Technol. B |
21巻
2号
888から
894ページまで
|
|
| 2003/03 |
High-Bright InGaN Multiple-Quantum-Well Blue Light-Emitting Diodes on Si (111) Using AlN/GaN Multilayers with a Thin AlN/AlGaN
Buffer Layer
B. Zhang,T. Egawa,H. Ishikawa,Y. Liu,T. Jimbo
|
Jpn. J. Appl. Phys. |
42巻
3A号
|
|
| 2003/02 |
Suppression of Crack Generation in GaN/AlGaN Distributed Bragg Reflector on Sapphire by the Insertion of GaN/AlGaN Superlattice
Grown by Metal-Organic Chemical Vapor Deposition
N. Nakada,H. Ishikawa,T. Egawa,T. Jimbo
|
Jpn. J. Appl. Phys. |
42巻
2B号
|
|
| 2002/10 |
Comparative study of drain-current collapse in AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating
SiC
ARULKUMARAN S.
|
Appl. Phys. Lett. |
81巻
16号
3073から
3075ページまで
|
|
| 2002/09 |
Growth of high-quality GaN films on epitaxial AlN/sapphire templates by MOVPE
SAKAI M.
|
Proc. of International Symposium on Compound Semiconductor, Tokyo, Japan, Oct. 2001 |
244巻
1号
6から
11ページまで
|
|
| 2002/08 |
Improved dc characteristics of AlGaN/ GaN high-electron-mobility transistors on AlN/sapphire templates
S. Arulkumaran,M. Sakai,T. Egawa,H. Ishikawa,T. Jimbo,T. Shibata,K. Asai,S. Sumiya,Y. Kuraoka他2名
|
Appl. Phys. Lett. |
81巻
6号
1131から
1133ページまで
|
|
| 2002/07 |
Demonstration of an InGaN-based light-emitting diode on an AlN/sapphire template by metalorganic chemical vapor deposition
T. Egawa,H. Ohmura,H. Ishikawa,T. Jimbo
|
Appl. Phys. Lett. |
81巻
2号
292から
294ページまで
|
|
| 2002/06 |
AlGaN/GaNヘテロ構造の諸特性と 高電子移動度トランジスター
石川博康、江川孝志、神保孝志
|
電気学会論文誌C |
122巻
6号
910から
915ページまで
|
電気学会 |
| 2002/06 |
Improved Characteristics of Blue and Green InGaN-Based Light-Emitting Diodes on Si Grown by Metalorganic Chemical Vapor Deposition
Egawa Takashi, Moku Tetsuji, Ishikawa Hiroyasu, Ohtsuka Kouji, Jimbo Takashi
|
Japanese Journal of Applied Physics |
41巻
6B号
|
公益社団法人 応用物理学会 |
| 2002/04 |
Characteristics of BCl3 Plasma-Etched GaN Schottky Diodes
M. Nakaji,T. Egawa,H. Ishikawa,S. Arulkumaran,T. Jimbo
|
Jpn. J. Appl. Phys. |
41巻
4B号
495ページまで
|
|
| 2002/04 |
MOCVD growth of high reflective GaN/AlGaN distributed Bragg reflectors
N. Nakada,H. Ishikawa,T. Egawa,T. Jimbo,M. Umeno
|
J. Crystal Growth |
237-239巻
961から
967ページまで
|
|
| 2002/03 |
High-Temperature effects of AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC substrates
S. Arulkumaran,T. Egawa,H. Ishikawa,T. Jimbo
|
Appl. Phys. Lett. |
80巻
12号
2186から
2188ページまで
|
|
| 2002/01 |
High-Quality GaN Growth on AlN/Sapphire Templates by MOVPE
SAKAI M.
|
Proc. 28th International Symposium on Compound Semiconductors 2001, Tokyo, Japan, October |
170巻
783から
788ページまで
|
|
| 2002/01 |
InGaN multiple-quantum-well green light-emitting diodes on Si grown by metalorganic chemical vapor deposition
T. Egawa,B. Zhang,N. Nishikawa,H. Ishikawa,T. Jimbo,M. Umeno
|
J. Appl. Phys. |
91巻
1号
528から
530ページまで
|
|
| 2002/01 |
GaN Metal-Semiconductor-Metal UV Photodetector with Recessed Electrodes
H. Jiang,A. Okui,H. Ishikawa,C. L. Shao,T. Egawa,T. Jimbo
|
Jpn. J. Appl. Phys. |
41巻
1A/B号
|
|
| 2002/01 |
Orange GaInN/GaN Multi-Quantum-Well Light-Emitting Diodes using a Post-Annealing Technique
H. Ishikawa,T. Egawa,T. Jimbo
|
Inst. Phys. Conf. Ser. |
170巻
237から
242ページまで
|
|
| 2001/12 |
GaN-based optoelectronic devices on sapphire and Si substrates
M. Umeno,T. Egawa,H. Ishikawa
|
Materials Science in Semiconductor Processing |
4巻
6号
459から
466ページまで
|
|
| 2001/11 |
Suppression of GaInN/GaN Multi- Quantum-Well Decomposition during Growth of Light-Emitting-Diode Structure
Ishikawa Hiroyasu, Nakada Naoyuki, Mori Masayoshi, Zhao Guan-Yuan, Egawa Takashi, Jimbo Takashi, Umeno Masayoshi
|
Japanese Journal of Applied Physics |
40巻
11A号
|
公益社団法人 応用物理学会 |
| 2001/11 |
InGaN Multiple-Quantum-Well Light Emitting Diodes on Si(111) Substrates
B. J. Zhang,T. Egawa,H. Ishikawa,N. Nishikawa,T. Jimbo,M. Umeno
|
physica status solidi (a) |
188巻
1号
151から
154ページまで
|
|
| 2001/10 |
High-Transconductance AlGaN/GaN High-Electron-Mobility Transistors on Semi-Insulating Silicon Carbide Substrate
S. Arulkumaran,T. Egawa,H. Ishikawa,T. Jimbo
|
Jpn. J. Appl. Phys. |
40巻
|
|
| 2001/10 |
Schottky diodes of Ni/Au on n-GaN grown on sapphire and SiC substrates
B. J. Zhang,T. Egawa,G. Y. Zhao,H. Ishikawa,M. Umeno,T. Jimbo
|
Appl. Phys. Lett. |
79巻
16号
2567から
2569ページまで
|
|
| 2001/08 |
Passivation of bulk and surface defects in GaAs grown on Si substrate by radio frequency phosphine/hydrogen plasma exposure
G Wang, T Ogawa, K Murase, K Hori, T Soga, BJ Zhang, GY Zhao, H Ishikawa, T Egawa, T Jimbo, M Umeno
|
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS |
40巻
8号
4781から
4784ページまで
|
|
| 2001/05 |
Back-Illuminated GaN Metal-Semiconductor-Metal UV Photodetector with High Internal Gain
Jiang Hao, Nakata Naoyuki, Zhao Guang Yuan, Ishikawa Hiroyasu, Shao Chun Lin, Egawa Takashi, Jimbo Takashi, Umeno Masayoshi
|
Japanese Journal of Applied Physics |
40巻
5B号
|
公益社団法人 応用物理学会 |
| 2001/03 |
Characterizations of Recessed Gate AlGaN/GaN HEMTs on Sapphire
T. Egawa,G. -Y. Zhao,H. Ishikawa,M. Umeno,T. Jimbo
|
IEEE Trans. Electron Devices |
48巻
3号
603から
608ページまで
|
|
| 2001/03 |
Effects of Annealing on Ti, Pd, and Ni/n-Al0.11Ga0.89N Schottky Diodes
S. Arulkumaran,T. Egawa,H. Ishikawa,M. Umeno,T. Jimbo
|
IEEE Trans. Electron Devices |
48巻
3号
573から
580ページまで
|
|
| 2001/01 |
Determination of exciton transition energy and bowing parameter of AlGaN alloys in AlGaN/GaN heterostructure by means of reflectance
measurement
H. Jiang,G. Y. Zhao,H. Ishikawa,T. Egawa,T. Jimbo,M. Umeno
|
J. Appl. Phys. |
89巻
2号
1046から
1052ページまで
|
|
| 2000/10 |
GaN MESFETs on (111) Si substrate grown by MOCVD
T. Egawa,N. Nakada,H. Ishikawa,M. Umeno
|
Electron. Lett. |
36巻
21号
1816から
1818ページまで
|
|
| 2000/04 |
Electrical Characteristics of Schottky Contacts on GaN and Al0.11Ga0.89N
S. Arulkumaran,T. Egawa,G. Y. Zhao,H. Ishikawa,T. Jimbo,M. Umeno
|
Jpn. J. Appl. Phys. |
39巻
4B号
|
|
| 2000/04 |
リセスゲートを用いたサファイア基板上 のAlGaN/GaN HEMTの諸特性
江川孝志、石川博康、趙廣元、神保孝志、梅野正義
|
電子情報通信学会論文誌Ｃ |
J83-C,巻
4号
253から
260ページまで
|
一般社団法人電子情報通信学会 |
| 2000/04 |
Investigations on Strained AlGaN/GaN/Sapphire and GaInN Multi-Quantum-Well Surface LEDs Using AlGaN/GaN Bragg Reflectors
ISHIKAWA Hiroyasu, NAKADA Naoyuki, NAKAJI Masaharu, ZHAO Guang-Yuan, EGAWA Takashi, JIMBO Takashi, UMENO Masayoshi
|
IEICE transactions on electronics |
E83-C巻
4号
591から
597ページまで
|
一般社団法人電子情報通信学会 |
| 2000/04 |
Improved characteristics of InGaN multiple-quantum-well light-emitting diode by GaN/AlGaN distributed Bragg reflector grown
on sapphire
N. Nakada,M. Nakaji,H. Ishikawa,T. Egawa,M. Umeno,T. Jimbo
|
Appl. Phys. Lett. |
76巻
14号
1804から
1806ページまで
|
|
| 2000/03 |
High-Mobility AlGaN/GaN Heterostructures Grown on Sapphire by Metal-Organic Chemical Vapor Deposition
G. -Y. Zhao,H. Ishikawa,T. Egawa,T. Jimbo,M. Umeno
|
Jpn. J. Appl. Phys. |
39巻
3A号
1035から
1038ページまで
|
|
| 2000/01 |
Bonding of GaN with Si using selenium sulphide (SeS2) and laser lift-off
J Arokiaraj, H Ishikawa, T Soga, T Egawa, T Jimbo, M Umeno
|
PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS |
1巻
754から
757ページまで
|
|
| 2000/01 |
Recessed gate AlGaN/GaN modulation-doped field-effect transistors on sapphire
EGAWA T.
|
Appl. Phys. Lett. |
76巻
1号
121から
123ページまで
|
|
| 1999/11 |
High-Quality GaN on Si Substrate Using AlGaN/AlN Intermediate Layer
H. Ishikawa,G. -Y. Zhao,N. Nakada,T. Egawa,T. Soga,T. Jimbo,M. Umeno
|
Phys. Stat. Sol. (a) |
176巻
599から
603ページまで
|
|
| 1999/09 |
Optical Absorption and Photoluminescence Studies of n-type GaN
G. -Y. Zhao,H. Ishikawa,H. Jiang, T. Egawa,T. Jimbo,M. Umeno
|
Jpn. J. Appl. Phys. |
38巻
9A/B号
|
|
| 1999/05 |
GaN on Si Substrate with AlGaN/AlN Intermediate Layer
H. Ishikawa,G. -Y. Zhao,N. Nakada,T. Egawa,T. Jimbo,M. Umeno
|
Jpn. J. Appl. Phys. |
38巻
5A号
|
|
| 1999/05 |
Heteroepitaxial growth of III-V compound semiconductors for optoelectronic devices
T. Egawa,H. Ishikawa,T. Jimbo,M. Umeno
|
Bull. Mater. Sci. |
22巻
3号
363から
367ページまで
|
|
| 1999/04 |
Characteristics of a GaN Metal Semiconductor Field-Effect TransistorGrown on a Sapphire Substrate by Metalorganic Chemical
Vapor Deposition
EGAWA T.
|
Jpn. J. Appl. Phys. |
38巻
4B号
2630から
2633ページまで
|
|
| 1998/09 |
The infrared optical functions of AlxGa1-xN determined by reflectance spectroscopy
G. Yu,H. Ishikawa,M.Umeno,T. Egawa,J. Watanabe,T. Soga,T. Jimbo
|
Appl. Phys. Lett. |
73巻
11号
1472から
1474ページまで
|
|
| 1998/08 |
Investigations of SiO2/n-GaN and Si3N4/n-GaN insulator-semiconductor interfaces with low interface state density
S. Arulkumaran,T. Egawa,H. Ishikawa,T. Jimbo,M. Umeno
|
Appl. Phys. Lett. |
73巻
6号
809から
811ページまで
|
|
| 1998/07 |
Thermo-optical nonlinearity of GaN grown by metalorganic chemical-vapor deposition
G. Y. Zhao,H. Ishikawa,G. Yu,T. Egawa,J. Watanabe,T. Soga
|
Appl. Phys. Lett. |
73巻
1号
22から
24ページまで
|
|
| 1998/06 |
EBIC observation of n-GaN grown on sapphire substrates by MOCVD
K. Yamamoto,H. Ishikawa,T. Egawa,T. Jimbo,M. Umeno
|
J. Crystal Growth |
189/190巻
575から
579ページまで
|
|
| 1998/06 |
Thermal stability of GaN on (111)Si substrate
H. Ishikawa,K. Yamamoto,T. Egawa,T. Soga,T. Jimbo,M. Umeno
|
J. Crystal Growth |
189/190巻
178から
182ページまで
|
|
| 1998/05 |
Optical properties of AlxGa1-xN/GaN heterostructures on sapphire by spectroscopic ellipsometry
G. Yu,H. Ishikawa,M. Umeno,T. Egawa,J. Watanabe,T. Jimbo,T. Soga
|
Appl. Phys. Lett. |
72巻
18号
2202から
2204ページまで
|
|
| 1998/03 |
Sidegating effect of GaN MESFETs grown on sapphire substrate
T. Egawa,H. Ishikawa,T. Jimbo,M. Umeno
|
Electronics Letters |
34巻
6号
598から
599ページまで
|
|
| 1998/01 |
Characteristics of GaN Schottky Diode Grown on Sapphire Substrate by MOCVD
T. Egawa,H. Ishikawa,K. Yamamoto,T. Jimbo,M. Umeno
|
Mater. Res. Soc. Symp. Proc. |
482巻
1101から
1106ページまで
|
|
| 1998/01 |
Pd/GaN Schottky Diode with a Barrier Height of 1.5 eV and a Reasonably Effective Richardson Coefficient
H. Ishikawa,K. Nakamura,T. Egawa,T. Jimbo,M. Umeno
|
Jpn. J. Appl. Phys. |
37巻
1A/B,号
|
|
| 1997/12 |
Fabrication of Flat End Mirror Etched by Focused Ion Beam for GaN-Based Blue-Green Laser Diode
T. Ito,H. Ishikawa,T. Egawa,T. Jimbo,M. Umeno
|
Jpn. J. Appl. Phys. |
36巻
12B号
7710から
7711ページまで
|
|
| 1997/08 |
Polarized Reflectance Spectroscopy and Spectroscopic Ellipsometry Determination of the Optical Anisotropy of Gallium Nitride
on Sapphire
G. Yu,H. Ishikawa,T. Egawa,T. Soga,J. Watanabe,T. Jimbo,M. Umeno
|
Jpn. J. Appl. Phys. |
36巻
8A号
|
|
| 1997/06 |
Optical properties of wurtzite structure GaN on sapphire around fundamental absorption edge (0.78-4.77eV) by spectroscopic
ellipsometry and the optical transmission method
G. Yu,G. Wang,H. Ishikawa,M. Umeno,T. Soga,T. Egawa,J. Watanabe,T. Jimbo
|
Appl. Phys. Lett. |
70巻
24号
3209から
3211ページまで
|
|